FDMA291P

Производится
FDMA291P - Onsemi
Увеличить
Краткое описание: P-Channel JFET, -20V, -6.6A, 42mΩ, Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerTrench® MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 6.6A. This single-element JFET offers a low drain-source on-resistance of 42mΩ at a nominal Vgs of -700mV. Designed for surface mounting with a 2mm x 2mm footprint and 0.75mm height, it operates from -55°C to 150°C with a maximum power dissipation of 2.4W. Key switching parameters include a 13ns turn-on delay and a 25ns fall time.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 0.75mm
Length 2mm
Series PowerTrench®
Weight 0.03g
Polarity P-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 42mR
Nominal Vgs -700mV
Termination SMD/SMT
Current Rating -6.6A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 1
Input Capacitance 1nF
Power Dissipation 2.4W
Threshold Voltage -700mV
Number of Elements 1
Turn-On Delay Time 13ns
Dual Supply Voltage -20V
Turn-Off Delay Time 42ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 2.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 36mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 6.6A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 42MR
Drain to Source Breakdown Voltage -20V