P-Channel PowerTrench® MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 6.6A. This single-element JFET offers a low drain-source on-resistance of 42mΩ at a nominal Vgs of -700mV. Designed for surface mounting with a 2mm x 2mm footprint and 0.75mm height, it operates from -55°C to 150°C with a maximum power dissipation of 2.4W. Key switching parameters include a 13ns turn-on delay and a 25ns fall time.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
2mm |
| Height |
0.75mm |
| Length |
2mm |
| Series |
PowerTrench® |
| Weight |
0.03g |
| Polarity |
P-CHANNEL |
| Fall Time |
25ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
42mR |
| Nominal Vgs |
-700mV |
| Termination |
SMD/SMT |
| Current Rating |
-6.6A |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
-20V |
| Package Quantity |
1 |
| Input Capacitance |
1nF |
| Power Dissipation |
2.4W |
| Threshold Voltage |
-700mV |
| Number of Elements |
1 |
| Turn-On Delay Time |
13ns |
| Dual Supply Voltage |
-20V |
| Turn-Off Delay Time |
42ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
2.4W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
36mR |
| Gate to Source Voltage (Vgs) |
8V |
| Continuous Drain Current (ID) |
6.6A |
| Drain to Source Voltage (Vdss) |
20V |
| Drain-source On Resistance-Max |
42MR |
| Drain to Source Breakdown Voltage |
-20V |