N-Channel PowerTrench® MOSFET, 30V Drain to Source Breakdown Voltage, 9A Continuous Drain Current, and 19mΩ Drain to Source Resistance. Features a 2.1V nominal Gate to Source Voltage and 2.4W Max Power Dissipation. Surface mount component with a 2mm x 2mm footprint and 0.75mm height, packaged on a 3000-piece tape and reel. Operates from -55°C to 150°C.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
2mm |
| Height |
0.75mm |
| Length |
2mm |
| Series |
PowerTrench® |
| Weight |
0.03g |
| Polarity |
N-CHANNEL |
| Fall Time |
2ns |
| Packaging |
Tape and Reel |
| Rds On Max |
19mR |
| Nominal Vgs |
2.1V |
| RoHS Compliant |
Yes |
| Package Quantity |
3000 |
| Input Capacitance |
760pF |
| Power Dissipation |
2.4W |
| Threshold Voltage |
2.1V |
| Turn-On Delay Time |
6ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
14ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
2.4W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
19mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
9A |
| Drain to Source Voltage (Vdss) |
30V |
| Drain to Source Breakdown Voltage |
30V |