FDMA910PZ

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FDMA910PZ - Onsemi
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Краткое описание: P-Channel JFET -20V, -9.4A, 20mR, Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerTrench® MOSFET featuring a -20V Drain to Source Breakdown Voltage and a continuous drain current of 9.4A. This single-element transistor offers a low 20mΩ Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 2.4W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and includes a threshold voltage of -500mV. The component is RoHS compliant and packaged in tape and reel.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 0.75mm
Length 2mm
Series PowerTrench®
Weight 0.03g
Polarity P-CHANNEL
Fall Time 103ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 20mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 2.805nF
Power Dissipation 2.4W
Threshold Voltage -500mV
Number of Channels 1
Turn-On Delay Time 9.4ns
Radiation Hardening No
Turn-Off Delay Time 135ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 2.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 20mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 9.4A
Drain to Source Voltage (Vdss) 20V
Drain to Source Breakdown Voltage -20V

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