FDMC86102L
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Краткое описание:
100V 18A 23mR N-Ch MOSFET SOIC
Дополнительная информация
N-Channel MOSFET, 100V Drain-Source Breakdown Voltage, 18A Continuous Drain Current, and 23mΩ Max Drain-Source On-Resistance. Features a 1.8V Threshold Voltage, 7.7ns Turn-On Delay, and 2.4ns Fall Time. Surface mountable in a SOIC package, this component offers 41W Max Power Dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Height | 0.75mm |
| Length | 3.3mm |
| Series | PowerTrench® |
| Weight | 0.16533333g |
| Polarity | N-CHANNEL |
| Fall Time | 2.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.33nF |
| Power Dissipation | 41W |
| Threshold Voltage | 1.8V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 41W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 24MR |
| Drain to Source Breakdown Voltage | 100V |
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