FDMS3660S

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FDMS3660S - Onsemi
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Краткое описание: Dual N-Ch MOSFET 30V 60A 1.8mR Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-Channel Power Stage MOSFET, 30V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 1.8mΩ Drain to Source Resistance. Features a 1.5V Threshold Voltage and 1.765nF Input Capacitance. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Supplied in tape and reel packaging, it is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 5.9mm
Height 1.1mm
Length 5mm
Series PowerTrench®
Weight 0.171g
FET Type 2 N-Channel
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 8mR
Nominal Vgs 1.5V
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.765nF
Power Dissipation 2.5W
Threshold Voltage 1.5V
Number of Elements 2
Turn-On Delay Time 7.7ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 2.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.8mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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