FDMS6681Z

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FDMS6681Z - Onsemi
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Краткое описание: P-Channel MOSFET, -30V, 3.2mR, 21.1A, Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel MOSFET, single element, surface mount package. Features -30V drain-source breakdown voltage, 3.2mΩ drain-source on-resistance, and 21.1A continuous drain current. Operates with a gate-source voltage up to 25V, exhibiting a threshold voltage of -1.7V. Offers fast switching with a 15ns turn-on delay and 197ns fall time. Maximum power dissipation is 73W, with a maximum operating temperature of 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6mm
Height 1.05mm
Length 5mm
Series PowerTrench®
Weight 0.0681g
Polarity P-CHANNEL
Fall Time 197ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.2mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 10.38nF
Power Dissipation 2.5W
Threshold Voltage -1.7V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 260ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 73W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.2mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21.1A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 3.2MR
Drain to Source Breakdown Voltage -30V

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