FDMS9600S

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FDMS9600S - Onsemi
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Краткое описание: Dual N-Ch MOSFET 30V 8.5mR 16A Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-Channel MOSFET, 30V drain-source breakdown voltage, 16A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features a 30V drain-source voltage (Vdss) and 20V gate-to-source voltage (Vgs). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Surface mountable in a 5mm x 6mm x 0.825mm package, supplied on a 3000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 6mm
Height 0.825mm
Length 5mm
Series PowerTrench®
Weight 0.009g
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 32ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 8.5mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.705nF
Power Dissipation 2.5W
Number of Elements 2
Radiation Hardening No
Turn-Off Delay Time 54ns
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 13MR
Drain to Source Breakdown Voltage 30V

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