FDN8601
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Краткое описание:
N-Channel MOSFET, 100V, 2.7A, 109mΩ, SMT
Дополнительная информация
N-Channel MOSFET, single element configuration, featuring 100V drain-to-source breakdown voltage and 2.7A continuous drain current. Surface mountable in a TO-236-3 package, this component offers a maximum power dissipation of 1.5W and a low Rds On of 109mR. Key switching characteristics include a 4.3ns turn-on delay and 3.4ns fall time, with input capacitance at 210pF. Operating across a temperature range of -55°C to 150°C, it is RoHS compliant and supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.92mm |
| Height | 0.94mm |
| Length | 1.4mm |
| Series | PowerTrench® |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Fall Time | 3.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 109mR |
| Nominal Vgs | 3V |
| Package/Case | TO-236-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 210pF |
| Power Dissipation | 1.5W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 7.8ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 85.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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