FDS4435A
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Краткое описание:
P-CH JFET, 30V, 9A, 17mR RdsOn, SOIC
Дополнительная информация
P-channel JFET transistor in SOIC package, designed for surface mount applications. Features a continuous drain current of 9A and a drain-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 17mΩ at a nominal Vgs of -1.7V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with a turn-on delay of 12ns and a fall time of 55ns. This RoHS compliant component is suitable for various electronic circuits.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | PowerTrench® |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 17mR |
| Nominal Vgs | -1.7V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | -9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Input Capacitance | 2.01nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | -30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 17mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 17mR |
| Drain to Source Breakdown Voltage | -30V |
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