FDS4685
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Краткое описание:
P-Channel JFET, 40V, 8.2A, 27mΩ, SOIC, Surface Mount
Дополнительная информация
P-Channel MOSFET, single element configuration, offering a -40V drain-source breakdown voltage and a continuous drain current of 8.2A. Features a low drain-source on-resistance of 27mΩ at a nominal Vgs of -1.6V. This surface mount device, packaged in SOIC, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 18ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | P-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Nominal Vgs | -1.6V |
| Package/Case | SOIC |
| Current Rating | -8.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 2500 |
| Input Capacitance | 1.872nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 27MR |
| Drain to Source Breakdown Voltage | -40V |
