FDS5680
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N-Channel MOSFET, 60V, 8A, 20mR, SOIC
Дополнительная информация
N-Channel MOSFET, single element configuration, offering 60V drain-source breakdown voltage and 8A continuous drain current. Features a low 20mΩ drain-source on-resistance and 2.5W maximum power dissipation. Operates within a -55°C to 150°C temperature range, with a 2.5V nominal gate-source threshold voltage. Packaged in SOIC for surface mounting, with a typical fall time of 32ns and turn-on delay of 13ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.85nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 20mR |
| Drain to Source Breakdown Voltage | 60V |
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