FDS6375

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FDS6375 - Onsemi
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Краткое описание: P-Channel JFET, -20V, -8A, 24mR, SOIC, SM
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerTrench® MOSFFET for surface mount applications. Features a -20V drain-source breakdown voltage and a continuous drain current of -8A. Offers a low drain-source on-resistance of 24mΩ at a nominal Vgs of -700mV. Operating temperature range from -55°C to 175°C with a maximum power dissipation of 2.5W. Packaged in SOIC for tape and reel delivery.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series PowerTrench®
Weight 0.13g
Polarity P-CHANNEL
Fall Time 57ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 24mR
Nominal Vgs -700mV
Package/Case SOIC
Current Rating -8A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 2500
Input Capacitance 2.694nF
Power Dissipation 2.5W
Threshold Voltage -700mV
Number of Elements 1
Turn-On Delay Time 12ns
Dual Supply Voltage -20V
Radiation Hardening No
Turn-Off Delay Time 124ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 2.5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 24MR
Drain to Source Breakdown Voltage -20V

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