FDS6682
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N-Channel JFET, 30V, 14A, 7.5mΩ, SOIC, Tape & Reel
Дополнительная информация
N-Channel PowerTrench® MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage, 14A continuous drain current, and a maximum drain-source on-resistance of 7.5mΩ. Operates with a gate-to-source voltage up to 20V and a nominal threshold voltage of 1.7V. Offers fast switching speeds with a fall time of 16ns and turn-on delay of 10ns. Maximum power dissipation is 2.5W, with operating temperatures from -55°C to 150°C. Supplied on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| Nominal Vgs | 1.7V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 14A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 2.31nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.7V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 44ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.5MR |
| Drain to Source Breakdown Voltage | 30V |
