FDS6685
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Краткое описание:
P-CHANNEL JFET, 30V, 8.8A, 20mR, SOIC-8
Дополнительная информация
The FDS6685 is a P-CHANNEL junction field-effect transistor with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 2.5W and a continuous drain current of 8.8A. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant. The FDS6685 has a drain to source breakdown voltage of -30V and a drain to source resistance of 20mR. It is suitable for surface mount applications.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Series | PowerTrench® |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Package/Case | SOIC |
| Current Rating | -8.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 2500 |
| Input Capacitance | 1.604nF |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 42ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | -30V |
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