FDS6699S
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N-Channel JFET, 30V, 21A, 3.6mR, SOIC, Surface Mount
Дополнительная информация
N-Channel PowerTrench® SyncFET™ MOSFET, a single-element junction field-effect transistor, offers a 30V drain-source breakdown voltage and a continuous drain current of 21A. Featuring a low 3.6mΩ drain-source on-resistance, this surface-mount device operates within a -55°C to 150°C temperature range. It boasts a maximum power dissipation of 2.5W and is supplied in a SOIC package on a 2500-piece tape and reel. Key electrical characteristics include a 1.4V nominal gate-source threshold voltage, 3.61nF input capacitance, and fast switching times with a 11ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench®, SyncFET™ |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.6mR |
| Nominal Vgs | 1.4V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 21A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 3.61nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 73ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.6MR |
| Drain to Source Breakdown Voltage | 30V |
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