FDS86252
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N-Channel MOSFET, 150V, 4.5A, 55mR, SOIC, Tape & Reel
Дополнительная информация
N-Channel Power Trench® MOSFET, single element configuration, featuring 150V drain-to-source breakdown voltage and 4.5A continuous drain current. Offers a low 55mΩ drain-to-source resistance at a nominal gate-to-source voltage of 3.4V. This surface mount component, packaged in SOIC, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Includes input capacitance of 955pF and switching times including a 2.9ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.5mm |
| Length | 4mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 2.9ns |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Nominal Vgs | 3.4V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 955pF |
| Power Dissipation | 5W |
| Threshold Voltage | 3.4V |
| Turn-On Delay Time | 9.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain to Source Breakdown Voltage | 150V |
