FDS9945
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Краткое описание:
N-Ch JFET, 60V, 3.5A, 100mR, SOIC, Dual
Дополнительная информация
N-Channel PowerTrench® MOSFET, dual element configuration, featuring 60V drain-source breakdown voltage and 3.5A continuous drain current. Offers a maximum drain-source on-resistance of 100mΩ at a nominal gate-source voltage of 2.5V. This surface-mount device in an SOIC package operates from -55°C to 175°C with a 2W maximum power dissipation. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 3ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.187g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | 2.5V |
| Package/Case | SOIC |
| Current Rating | 3.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2500 |
| Input Capacitance | 420pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Drain to Source Breakdown Voltage | 60V |
