FDY102PZ
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Краткое описание:
P-Channel JFET, 20V, 830mA, 500mR, SC Package, SM
Дополнительная информация
P-channel JFET with -20V drain-source breakdown voltage and 830mA continuous drain current. Features 500mΩ maximum drain-source on-resistance and a -700mV threshold voltage. This single-element transistor offers fast switching with 2.9ns fall time and 3.5ns turn-on delay. Packaged in a compact SC surface-mount case, it operates from -55°C to 150°C with 625mW maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.98mm |
| Height | 0.78mm |
| Length | 1.7mm |
| Series | PowerTrench® |
| Weight | 0.03g |
| Polarity | P-CHANNEL |
| Fall Time | 2.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 500mR |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 135pF |
| Power Dissipation | 625mW |
| Threshold Voltage | -700mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 3.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 625mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 500mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 830mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 500MR |
| Drain to Source Breakdown Voltage | 20V |
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