FDZ191P

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FDZ191P - Onsemi
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Краткое описание: P-Channel JFET, -20V, -3A, 67mR, Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerTrench® WL-CSP MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current rating of 3A. Offers a low drain-source on-resistance of 67mΩ at 1.5V specified gate-source voltage. This single-element JFET boasts a maximum power dissipation of 1.9W and operates across a wide temperature range from -55°C to 150°C. Surface mountable with a compact 1.5mm x 1mm x 0.37mm footprint, it is supplied on a 5000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1mm
Height 0.37mm
Length 1.5mm
Series PowerTrench®
Weight 0.054g
Polarity P-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 85mR
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 1
Input Capacitance 800pF
Power Dissipation 1.5W
Threshold Voltage 600mV
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 1.9W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 67mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 85MR
Drain to Source Breakdown Voltage -20V

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