FDZ661PZ

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FDZ661PZ - Onsemi
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Краткое описание: P-Channel JFET, -20V, -2.6A, 140mΩ, Surface Mount
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET featuring a 2.6A continuous drain current and a -20V drain-to-source breakdown voltage. This surface mount device offers a low 140mΩ drain-to-source resistance and a 1.3W power dissipation. Designed with a thin WL-CSP package measuring 0.8mm x 0.8mm x 0.15mm, it operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 4.9ns turn-on delay and a 33ns fall time.
RoHS Compliant
Mount Surface Mount
Width 0.8mm
Height 0.15mm
Length 0.8mm
Series PowerTrench®
Weight 0.067g
Polarity P-CHANNEL
Fall Time 33ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 140mR
RoHS Compliant Yes
Package Quantity 5000
Input Capacitance 555pF
Power Dissipation 1.3W
Turn-On Delay Time 4.9ns
Radiation Hardening No
Turn-Off Delay Time 68ns
Element Configuration Single
Max Power Dissipation 400mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 140mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 2.6A
Drain to Source Voltage (Vdss) 20V
Drain to Source Breakdown Voltage -20V