P-channel MOSFET featuring a 2.6A continuous drain current and a -20V drain-to-source breakdown voltage. This surface mount device offers a low 140mΩ drain-to-source resistance and a 1.3W power dissipation. Designed with a thin WL-CSP package measuring 0.8mm x 0.8mm x 0.15mm, it operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 4.9ns turn-on delay and a 33ns fall time.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
0.8mm |
| Height |
0.15mm |
| Length |
0.8mm |
| Series |
PowerTrench® |
| Weight |
0.067g |
| Polarity |
P-CHANNEL |
| Fall Time |
33ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
140mR |
| RoHS Compliant |
Yes |
| Package Quantity |
5000 |
| Input Capacitance |
555pF |
| Power Dissipation |
1.3W |
| Turn-On Delay Time |
4.9ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
68ns |
| Element Configuration |
Single |
| Max Power Dissipation |
400mW |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
140mR |
| Gate to Source Voltage (Vgs) |
8V |
| Continuous Drain Current (ID) |
2.6A |
| Drain to Source Voltage (Vdss) |
20V |
| Drain to Source Breakdown Voltage |
-20V |