FJX992TF

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FJX992TF - Onsemi
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Краткое описание: PNP BJT Transistor, 120V, 100mA, 100MHz, SOT-323, SM
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for audio-frequency low-noise amplification. Features a 120V Collector-Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current. Offers a 100MHz Gain Bandwidth Product and 200 minimum hFE. Packaged in SOT-323 surface mount for tape and reel deployment, with a maximum power dissipation of 235mW. Operates across a -55°C to 150°C temperature range.
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 1mm
Length 2mm
Series FJX992
Weight 0.03g
hFE Min 200
Polarity PNP
Frequency 100MHz
Packaging Tape and Reel
Package/Case SOT-323
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 235mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 120V
Max Collector Current 100mA
Max Power Dissipation 235mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -120V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 120V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage -300mV