FMA9AT148
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PNP BJT Transistor, 50V Vce, 50mA Ic, 250MHz, SMD
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of -50mA. This silicon transistor offers a transition frequency of 250MHz and a minimum hFE of 30. Packaged in an SC-74A (5-pin) surface-mount device (SMD/SMT) with dimensions of 2.1mm (L) x 1.35mm (W) x 0.9mm (H). Rated for 300mW power dissipation and operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.1mm |
| hFE Min | 30 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | -50mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -50mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
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