FMB3906
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PNP BJT, 40V, 200mA, 200MHz, SOIC, Surface Mount
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 40V collector-emitter voltage (VCEO) and a 200mA maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in SOIC for surface mounting, this component operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.036g |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOIC |
| Max Frequency | 200MHz |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Power Dissipation | 700mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 700mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
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