FMB5551
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NPN BJT, 160V, 600mA, 300MHz, SOT-23-6, SM
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 160V collector-emitter breakdown voltage and 600mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 80. Packaged in SOT-23-6 for surface mounting, this component offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.68mm |
| Height | 1.12mm |
| Length | 3mm |
| Weight | 0.036g |
| hFE Min | 80 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-6 |
| Max Frequency | 300MHz |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 160V |
| Package Quantity | 3000 |
| Power Dissipation | 700mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 700mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
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