FMMT415TC
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Краткое описание:
NPN BJT 100V 500mA Si Small Signal Transistor SMT
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 100V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 260V collector-base voltage and 6V emitter-base voltage. Offers a transition frequency of 40MHz and a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface-mount case, this lead-free and RoHS-compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 10000 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 40MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 330mW |
| Gain Bandwidth Product | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 260V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 100V |
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