FMMT415TD
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 100V, 500mA, 40MHz, SOT-23-3
Дополнительная информация
NPN bipolar junction transistor for surface mount applications, featuring a 100V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a maximum collector-emitter saturation voltage of 500mV and a 40MHz gain bandwidth product. It operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 package. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 40MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 40MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 330mW |
| Gain Bandwidth Product | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 320V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
