FMMT417TA

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FMMT417TA - Diodes
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Краткое описание: 100V 500mA NPN BJT, 40MHz, TO-236-3 SMT
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage and a 500mA continuous collector current. Operates with a 320V collector base voltage and 6V emitter base voltage. Packaged in a TO-236-3 surface mount case, this RoHS and REACH SVHC compliant transistor offers a transition frequency of 40MHz and a maximum power dissipation of 330mW.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.1mm
Length 3mm
Weight 0.000282oz
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-236-3
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 1
Reach SVHC Compliant Yes
Transition Frequency 40MHz
Max Breakdown Voltage 100V
Max Collector Current 500mA
Max Power Dissipation 330mW
Gain Bandwidth Product 40MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 500mA
Collector Base Voltage (VCBO) 320V
Collector-emitter Voltage-Max 500mV
Collector Emitter Breakdown Voltage 100V

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