FMMT449TA
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 30V VCEO, 1A IC, 150MHz, SOT-23
Дополнительная информация
NPN silicon bipolar junction transistor for general-purpose amplification and switching. Features a 1A continuous collector current, 30V collector-emitter breakdown voltage, and 150MHz transition frequency. Housed in a compact SOT-23 surface-mount package, this lead-free component operates across a wide temperature range of -55°C to 150°C. Maximum power dissipation is 500mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 150MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
