FMMT458TA
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NPN BJT Transistor, 400V VCEO, 225mA IC, 50MHz, SOT-23
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 400V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 225mA. Operates with a maximum power dissipation of 500mW and a transition frequency of 50MHz. Packaged in a SOT-23 surface-mount case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 50MHz |
| Current Rating | 225mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 225mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 225mA |
| Collector Base Voltage (VCBO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
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