FMMT560TA

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FMMT560TA - Diodes
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Краткое описание: PNP BJT Transistor, 500V VCEO, 150mA IC, 60MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 500V Collector-Emitter Breakdown Voltage (VCEO) and 500V Collector Base Voltage (VCBO). Offers a continuous collector current of -150mA and a maximum power dissipation of 500mW. Operates across a temperature range of -55°C to 150°C. Packaged in a SOT-23 surface-mount plastic package, this component is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.1mm
Length 3mm
Weight 0.000282oz
Polarity PNP
Frequency 60MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 60MHz
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -500V
Package Quantity 3000
Power Dissipation 500mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 60MHz
Max Breakdown Voltage 500V
Max Collector Current 150mA
Max Power Dissipation 500mW
Gain Bandwidth Product 60MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -150mA
Collector Base Voltage (VCBO) 500V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 500V
Collector Emitter Breakdown Voltage 500V
Collector Emitter Saturation Voltage -500mV

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