FMMT591ATA

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FMMT591ATA - Diodes
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Краткое описание: PNP BJT Transistor, 40V VCEO, 1A IC, 150MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) in SOT-23 package. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current. Offers a -500mV Collector-Emitter Saturation Voltage and a 5V Emitter-Base Voltage (VEBO). Operates with a 150MHz Gain Bandwidth Product and a maximum power dissipation of 500mW. Suitable for surface mount applications with a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
Current 1A
Voltage 40V
Polarity PNP
Frequency 150MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 150MHz
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -40V
Package Quantity 3000
Power Dissipation 500mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 150MHz
Max Breakdown Voltage 40V
Max Collector Current 1A
Max Power Dissipation 500mW
Gain Bandwidth Product 150MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -500mV

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