FMMT617TA
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 3A I(C), 15V V(BR)CEO, 120MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 3A continuous collector current and a 15V collector-emitter breakdown voltage. Operates with a 120MHz gain bandwidth product and a 200mV collector-emitter saturation voltage. Packaged in a SOT-23 case, this silicon transistor offers a wide operating temperature range from -55°C to 150°C and a maximum power dissipation of 625mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 120MHz |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Package Quantity | 3000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 3A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 200mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
