FMMT619TC
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NPN BJT Transistor, 50V, 2A, 165MHz, SOT-23, SM
Дополнительная информация
NPN bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 2A continuous collector current. This silicon transistor offers a 165MHz gain bandwidth product and a low 150mV collector-emitter saturation voltage. Packaged in a compact SOT-23 plastic surface-mount case, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 165MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 10000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 165MHz |
| Max Collector Current | 2A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 165MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 2A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 220mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
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