FMMT717TA
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PNP BJT Transistor, 2.5A I(C), 12V V(BR)CEO, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 package. Features a continuous collector current of -2.5A and a collector-emitter breakdown voltage of 12V. Offers a transition frequency of 110MHz and a maximum power dissipation of 625mW. Designed for surface mount applications with a lead-free and RoHS compliant construction. Operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 110MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 110MHz |
| Current Rating | -2.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -12V |
| Package Quantity | 3000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 2.5A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -2.5A |
| Collector Base Voltage (VCBO) | 12V |
| Collector-emitter Voltage-Max | 220mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -180mV |
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