FMMT718TA

FMMT718TA - Diodes
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Краткое описание: PNP BJT Transistor, 20V VCEO, 1.5A IC, 180MHz, SOT-23

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) in SOT-23 package. Features a 20V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1.5A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 180MHz. Surface mountable with a maximum power dissipation of 625mW. Operates across a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
hFE Min 300
Polarity PNP
Frequency 180MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-23
Max Frequency 180MHz
Current Rating -1.5A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 3000
Power Dissipation 625mW
Number of Elements 1
Turn-On Delay Time 40ns
Radiation Hardening No
Turn-Off Delay Time 670ns
Reach SVHC Compliant No
Transition Frequency 180MHz
Max Breakdown Voltage 20V
Max Collector Current 1.5A
Max Power Dissipation 625mW
Gain Bandwidth Product 180MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1.5A
Collector Base Voltage (VCBO) 20V
Collector-emitter Voltage-Max 220mV
Collector Emitter Voltage (VCEO) 20V
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -145mV

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