FMMT723TA
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 100V, 1A, 200MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 625mW and a transition frequency of 200MHz. Packaged in a 3-pin SOT-23 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 250 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 200MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 3000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 330mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -210mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
