FMMTA06TA
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NPN BJT Transistor, 80V, 500mA, 100MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current (IC). Operates with a 100MHz transition frequency and a maximum power dissipation of 330mW. Packaged in a 3-pin SOT-23 surface-mount case. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 3000 |
| Power Dissipation | 330mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 330mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
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