FMMTA14TA
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NPN BJT Transistor, 30V VCEO, 300mA IC, SOT-23, SMD
Дополнительная информация
NPN bipolar junction transistor in SOT-23 package, featuring a 40V collector-emitter breakdown voltage and 300mA continuous collector current. This silicon transistor offers a minimum DC current gain (hFE) of 10000 and a maximum collector-emitter saturation voltage of 900mV. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. The component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| hFE Min | 10000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 300mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 300mA |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 300mA |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 900mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 900mV |
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