FSB560
Производится
Увеличить
Краткое описание:
NPN BJT, 60V, 2A, 75MHz, TO-236-3, SMT
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for surface mount applications, featuring a 60V collector-emitter breakdown voltage and a 2A maximum collector current. This component offers a low saturation voltage of 350mV and a minimum hFE of 100, with a transition frequency of 75MHz. Packaged in a TO-236-3 case, it operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 0.94mm |
| Length | 2.92mm |
| Weight | 0.03g |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 75MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Max Frequency | 75MHz |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 75MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 75MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 350mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
