FZT749
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Краткое описание:
PNP BJT Transistor, 25V VCEO, 3A IC, 100MHz, SOT-223, SM
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) designed for low saturation applications. Features a maximum collector current of 3A and a collector-emitter voltage of 25V. Operates with a transition frequency of 100MHz and a minimum hFE of 100. Packaged in a SOT-223 surface-mount case, this RoHS compliant component offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.7mm |
| Length | 6.7mm |
| Weight | 0.188g |
| hFE Min | 100 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 100MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -25V |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -35V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -300V |
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