IMB3AT110
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PNP BJT Transistor, 50V, -100mA, 250MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -100mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Packaged in a 6-pin SC-74 (SMT6) surface mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 300mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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