IMD10AT108
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Краткое описание:
NPN/PNP BJT, 50V, 500mA, 200MHz, SMT Transistor
Дополнительная информация
Dual NPN/PNP bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a 5V emitter-base voltage and offers a minimum hFE of 100. This silicon transistor is housed in a 6-pin SMT6 package, measuring 2.9mm x 1.6mm x 1.1mm, suitable for surface mounting. Rated for 300mW power dissipation and a transition frequency of 200MHz, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 100 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SMD/SMT |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Max Output Current | 500mA |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 300mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -500mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
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