IMX1T110
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NPN BJT Transistor, 50V, 150mA, 180MHz, 2-Element, SMT
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and 150mA continuous collector current (IC). This 2-element silicon transistor operates with a gain bandwidth product (fT) of 180MHz and a minimum hFE of 120. Packaged in a compact 6-pin SMT6 (SC-74) surface-mount case, it offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 120 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Max Frequency | 180MHz |
| Current Rating | 150mA |
| Output Voltage | 50V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Max Output Current | 150mA |
| Max Output Voltage | 50V |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 150mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
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