IRF3704ZSPBF
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Краткое описание:
N-Channel MOSFET, 20V, 67A, 7.9mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, featuring a 20V drain-source breakdown voltage and a maximum continuous drain current of 67A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 7.9mΩ at a nominal gate-source voltage of 2.1V. With a maximum power dissipation of 57W and an operating temperature range of -55°C to 175°C, it is suitable for surface mount applications. The component is lead-free and RoHS compliant, with typical switching times including an 8.9ns turn-on delay and a 4.2ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 4.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 7.9mR |
| Nominal Vgs | 2.1V |
| Package/Case | D2PAK |
| Current Rating | 67A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 50 |
| Input Capacitance | 1.22nF |
| Power Dissipation | 57W |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 57W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 67A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 7.9MR |
| Drain to Source Breakdown Voltage | 20V |
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