IRF7807ZPBF
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Краткое описание:
N-Channel MOSFET, 30V, 11A, 8.2mΩ, SOIC, Surface Mount
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET, offers a continuous drain current of 11A and a drain-to-source breakdown voltage of 30V. Featuring a low drain-source on-resistance of 8.2mR, this surface-mount device operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. The SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height, includes a nominal gate-to-source voltage of 1.8V and an input capacitance of 770pF. This RoHS compliant component is designed for lead-free assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 3.1ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 1.8V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 95 |
| Input Capacitance | 770pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.2MR |
| Drain to Source Breakdown Voltage | 30V |
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