IRFD220PBF
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 200V, 800mA, 1W, Through Hole
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features 200V drain-source breakdown voltage and 800mA continuous drain current. Offers low 800mΩ drain-source on-resistance and 260pF input capacitance. Operates within a -55°C to 150°C temperature range with 1W power dissipation. Packaged in a through-hole DIP for easy mounting. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 800mR |
| Nominal Vgs | 4V |
| Package/Case | DIP |
| Polarization | N |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 260pF |
| Power Dissipation | 1W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Drain to Source Breakdown Voltage | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
