IRFD9010PBF
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Краткое описание:
P-Channel MOSFET, 50V, 1.1A, Through Hole, DIP
Дополнительная информация
P-channel, small-signal MOSFET transistor featuring a 50V drain-to-source breakdown voltage and 1.1A continuous drain current. This through-hole component offers a low Rds On of 350mR, a threshold voltage of -4V, and fast switching times with a turn-on delay of 6.1ns and fall time of 39ns. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. The device is housed in a 4-pin DIP package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 0.197inch |
| Height | 0.133inch |
| Length | 0.247inch |
| Polarity | P-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 500mR |
| Package/Case | DIP |
| Current Rating | -1.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 2500 |
| Input Capacitance | 240pF |
| Power Dissipation | 1W |
| Threshold Voltage | -4V |
| Turn-On Delay Time | 6.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 350mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 50V |
| Drain to Source Breakdown Voltage | 50V |
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