IRFL210PBF
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Краткое описание:
N-Channel JFET, 200V, 0.96A ID, 1.5R RDS(on), SOT-223
Дополнительная информация
N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 200V Drain-to-Source Voltage (Vdss) and 960mA Continuous Drain Current (ID). Offers a low Drain-to-Source On Resistance (Rds On) of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Packaged in a SOT-223 surface-mount case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.8mm |
| Length | 6.7mm |
| Weight | 0.008826oz |
| Voltage | 200V |
| Polarity | N-CHANNEL |
| Fall Time | 8.9ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Nominal Vgs | 4V |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 4000 |
| Input Capacitance | 140pF |
| Power Dissipation | 2W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.2ns |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 960mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
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