IRLD014PBF
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Краткое описание:
N-Channel MOSFET, 60V, 1.7A, 200mR, DIP, Through Hole
Дополнительная информация
N-channel silicon power MOSFET with 60V drain-source breakdown voltage and 1.7A continuous drain current. Features 200mΩ maximum drain-source on-resistance and 1.3W maximum power dissipation. Operates across a -55°C to 175°C temperature range. Through-hole mounting in a 4-pin DIP package. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Package/Case | DIP |
| Polarization | N |
| Current Rating | 1.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2500 |
| Input Capacitance | 400pF |
| Power Dissipation | 1.3W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | 60V |
