IRLR8729PBF
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Краткое описание:
N-CH MOSFET 30V 58A DPAK 8.9mR
Дополнительная информация
N-channel MOSFET in a DPAK package, featuring 30V drain-source voltage and 58A continuous drain current. Offers a maximum drain-source on-resistance of 8.9mΩ at a nominal gate-source voltage of 1.8V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 55W. Surface mountable with typical turn-on and turn-off delay times of 10ns and 11ns respectively.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | HEXFET® |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 8.9mR |
| Nominal Vgs | 1.8V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 1.35nF |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 55W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.9MR |
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